磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究

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	磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究
	杜鑫; 苗蕾; 刘呈燕; 王潇漾
	2016
Source Publication	新能源进展
ISSN	2095-560X
Volume	004 Issue:005 Pages:345
Abstract	本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明：B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下具有较高的Seebeck系数,最大值为6.75×10^-4 V/K,电阻率最小值为1.6×10^-5Ω·m,其功率因子最大值为0.026 W/（m·K^2）。
Language	英语
Document Type	期刊论文
Identifier	http://ir.giec.ac.cn/handle/344007/22289
Collection	中国科学院广州能源研究所
Affiliation	中国科学院广州能源研究所
First Author Affilication	GuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation GB/T 7714	杜鑫,苗蕾,刘呈燕,等. 磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究[J]. 新能源进展,2016,004(005):345.
APA	杜鑫,苗蕾,刘呈燕,&王潇漾.(2016).磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究.新能源进展,004(005),345.
MLA	杜鑫,et al."磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究".新能源进展 004.005(2016):345.

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