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颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺
班群; 沈辉; 王晓晶
2004
Source Publication太阳能学报
ISSN0254-0096
Volume025Issue:001Pages:95
Abstract主要阐述了以低纯度颗粒硅带(SSP—Silicon Sheet from Powder)为衬底的多晶硅薄膜(poly-CSiTF)太阳电池的制备,给出制得的太阳电池I—V曲线和光谱响应曲线并由此讨论影响电池性能的可能因素,着重分析了颗粒硅带衬底的作用。目前,在没有任何电池工艺优化的条件下,在低纯度硅带上制得多晶硅薄膜电池的转换效率通常在5%~7%范围(电池面积1cm^2)。
Language英语
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/21851
Collection中国科学院广州能源研究所
Affiliation中国科学院广州能源研究所
First Author AffilicationGuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation
GB/T 7714
班群,沈辉,王晓晶. 颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺[J]. 太阳能学报,2004,025(001):95.
APA 班群,沈辉,&王晓晶.(2004).颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺.太阳能学报,025(001),95.
MLA 班群,et al."颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺".太阳能学报 025.001(2004):95.
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