颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺

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	颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺
	班群; 沈辉; 王晓晶
	2004
Source Publication	太阳能学报
ISSN	0254-0096
Volume	025 Issue:001 Pages:95
Abstract	主要阐述了以低纯度颗粒硅带(SSP—Silicon Sheet from Powder)为衬底的多晶硅薄膜(poly-CSiTF)太阳电池的制备，给出制得的太阳电池I—V曲线和光谱响应曲线并由此讨论影响电池性能的可能因素，着重分析了颗粒硅带衬底的作用。目前，在没有任何电池工艺优化的条件下，在低纯度硅带上制得多晶硅薄膜电池的转换效率通常在5％～7％范围(电池面积1cm^2)。
Language	英语
Document Type	期刊论文
Identifier	http://ir.giec.ac.cn/handle/344007/21851
Collection	中国科学院广州能源研究所
Affiliation	中国科学院广州能源研究所
First Author Affilication	GuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation GB/T 7714	班群,沈辉,王晓晶. 颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺[J]. 太阳能学报,2004,025(001):95.
APA	班群,沈辉,&王晓晶.(2004).颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺.太阳能学报,025(001),95.
MLA	班群,et al."颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺".太阳能学报 025.001(2004):95.

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