GIEC OpenIR
nio为空穴传输层的量子点发光二极管及其性能
郭起玲1; 李景灵2; 何新华1; 徐雪青2
2018
Source Publication人工晶体学报
ISSN1000-985X
Volume47Issue:3Pages:556
Abstract采用溶液法制备NiO纳米晶,利用XRD、TEM、UPS表征样品并将其应用于结构为ITO/NiO/PVK/QDs/ZnO/Ag的量子点发光二极管(QLED)中。XPS测试表明紫外臭氧处理可诱导NiO晶格内部产生Ni~(3 +)离子,通过引入多次旋涂和多次紫外臭氧处理相结合的工艺,获得Ni~(3 +)离子含量增多且分布均匀的NiO薄膜。研究结果显示:随着旋涂NiO次数的增加,器件性能呈现出逐渐改善趋势,当旋涂4次时,器件获得最佳效果,其中最佳发光强度从184 cd/m~2提高到4775 cd/m~2,最大电流效率为0.54 cd/A,最大外量子效率为0.22%,与未改善的单层NiO基QLED相比,均提高超过50倍。
Language英语
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/20284
Collection中国科学院广州能源研究所
Affiliation1.华南理工大学
2.中国科学院广州能源研究所
Recommended Citation
GB/T 7714
郭起玲,李景灵,何新华,等. nio为空穴传输层的量子点发光二极管及其性能[J]. 人工晶体学报,2018,47(3):556.
APA 郭起玲,李景灵,何新华,&徐雪青.(2018).nio为空穴传输层的量子点发光二极管及其性能.人工晶体学报,47(3),556.
MLA 郭起玲,et al."nio为空穴传输层的量子点发光二极管及其性能".人工晶体学报 47.3(2018):556.
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