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磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究
Alternative TitleThermoelectric Property of Si1-xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering
杜鑫1,2; 苗蕾1,3; 刘呈燕1,3; 王潇漾1,3
2016
Source Publication新能源进展
Issue5Pages:345-350
Cooperation Status国内
AbstractUnique structure (SiGe/B) based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each of
Subtype期刊
Other Abstract本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明:B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下具有较高的Seebeck系数,最大值为6.75×10^-4 V/K,电阻率最小值为1.6×10^-5Ω·m,其功率因子最大值为0.026 W/(m·K^2)。
Keyword热电材料 硅锗薄膜 纳米结构 热电性能
Language中文
Funding Organization国家自然科学基金项目(51572049,51562005);广东省科技计划项目(2013B050800006);中国科学院BIC对外合作项目(182344KYSB20130006)
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/16076
Collection中国科学院广州能源研究所
Affiliation1.中国科学院广州能源研究所,中国科学院可再生能源重点实验室,广州 510640
2.中国科学院大学,北京100049
3.桂林电子科技大学,广西桂林541004
First Author AffilicationGuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation
GB/T 7714
杜鑫,苗蕾,刘呈燕,等. 磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究[J]. 新能源进展,2016(5):345-350.
APA 杜鑫,苗蕾,刘呈燕,&王潇漾.(2016).磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究.新能源进展(5),345-350.
MLA 杜鑫,et al."磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究".新能源进展 .5(2016):345-350.
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