GIEC OpenIR  > 中国科学院广州能源研究所
Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes
Li, Jingling1,2,3; Guo, Qiling1,2,4; Jin, Hu1,2,3; Wang, Kelai1,2,5; Xu, Dehua1,2,3; Xu, Gang1,2,3; Xu, Xueqing1,2,3
2017
发表期刊RSC ADVANCES
卷号7期号:44页码:27464-27472
摘要In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated. As a result of the excellent wettability of the MoOx precursor, a smooth sMoO(x) HIL film with a roughness of less than 1 nm was obtained. In comparison with a device based on PEDOT:PSS, the best sMoO(x)-based QD-LED displayed comparable device performance in terms of a maximum luminance of 10 225 cd m(-2), a peak current efficiency of 4.04 cd A(-1), a maximum external quantum efficiency of 1.61% and, more importantly, an approximately threefold increase in operational lifetime. Furthermore, we investigated the relationship between the thermal treatment of the sMoO(x) film and the device performance. UPS measurements revealed that the work function of the sMoOx film underwent an upshift from 5.51 to 4.90 eV when the annealing temperature was increased from 50 to 250 C-circle, which indicated that low-temperature treatment of the sMoO(x) HIL is beneficial for hole injection and EL performance. This demonstration of a bright, efficient and stable sMoO(x)-based QD-LED provides another feasible application of solution-processable transition metal oxide materials as the HIL within QD-LEDs and promotes the development of low-cost, all-solution-processed optoelectronic devices.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
资助者National Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069) ; National Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069)
DOI10.1039/c7ra04021k
研究领域[WOS]Chemistry
关键词[WOS]CHARGE-TRANSPORT LAYERS ; ORGANIC ELECTRONICS ; HIGHLY EFFICIENT ; DEVICES ; PERFORMANCE ; MULTILAYER ; BRIGHT
收录类别SCI
语种英语
资助者National Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069) ; National Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069)
WOS类目Chemistry, Multidisciplinary
WOS记录号WOS:000402166600034
引用统计
文献类型期刊论文
条目标识符http://ir.giec.ac.cn/handle/344007/14141
专题中国科学院广州能源研究所
作者单位1.Chinese Acad Sci, CAS Key Lab Renewable Energy, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China
2.Guangdong Prov Key Lab New & Renewable Energy Res, Guangzhou 510640, Guangdong, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
5.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
推荐引用方式
GB/T 7714
Li, Jingling,Guo, Qiling,Jin, Hu,et al. Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes[J]. RSC ADVANCES,2017,7(44):27464-27472.
APA Li, Jingling.,Guo, Qiling.,Jin, Hu.,Wang, Kelai.,Xu, Dehua.,...&Xu, Xueqing.(2017).Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes.RSC ADVANCES,7(44),27464-27472.
MLA Li, Jingling,et al."Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes".RSC ADVANCES 7.44(2017):27464-27472.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li, Jingling]的文章
[Guo, Qiling]的文章
[Jin, Hu]的文章
百度学术
百度学术中相似的文章
[Li, Jingling]的文章
[Guo, Qiling]的文章
[Jin, Hu]的文章
必应学术
必应学术中相似的文章
[Li, Jingling]的文章
[Guo, Qiling]的文章
[Jin, Hu]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。