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Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes
Li, Jingling1,2,3; Guo, Qiling1,2,4; Jin, Hu1,2,3; Wang, Kelai1,2,5; Xu, Dehua1,2,3; Xu, Gang1,2,3; Xu, Xueqing1,2,3
2017
Source PublicationRSC ADVANCES
Volume7Issue:44Pages:27464-27472
AbstractIn this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated. As a result of the excellent wettability of the MoOx precursor, a smooth sMoO(x) HIL film with a roughness of less than 1 nm was obtained. In comparison with a device based on PEDOT:PSS, the best sMoO(x)-based QD-LED displayed comparable device performance in terms of a maximum luminance of 10 225 cd m(-2), a peak current efficiency of 4.04 cd A(-1), a maximum external quantum efficiency of 1.61% and, more importantly, an approximately threefold increase in operational lifetime. Furthermore, we investigated the relationship between the thermal treatment of the sMoO(x) film and the device performance. UPS measurements revealed that the work function of the sMoOx film underwent an upshift from 5.51 to 4.90 eV when the annealing temperature was increased from 50 to 250 C-circle, which indicated that low-temperature treatment of the sMoO(x) HIL is beneficial for hole injection and EL performance. This demonstration of a bright, efficient and stable sMoO(x)-based QD-LED provides another feasible application of solution-processable transition metal oxide materials as the HIL within QD-LEDs and promotes the development of low-cost, all-solution-processed optoelectronic devices.
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1039/c7ra04021k
WOS Subject ExtendedChemistry
WOS KeywordCHARGE-TRANSPORT LAYERS ; ORGANIC ELECTRONICS ; HIGHLY EFFICIENT ; DEVICES ; PERFORMANCE ; MULTILAYER ; BRIGHT
Indexed BySCI
Language英语
Funding OrganizationNational Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069)
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000402166600034
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/14141
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, CAS Key Lab Renewable Energy, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China
2.Guangdong Prov Key Lab New & Renewable Energy Res, Guangzhou 510640, Guangdong, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
5.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
Recommended Citation
GB/T 7714
Li, Jingling,Guo, Qiling,Jin, Hu,et al. Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes[J]. RSC ADVANCES,2017,7(44):27464-27472.
APA Li, Jingling.,Guo, Qiling.,Jin, Hu.,Wang, Kelai.,Xu, Dehua.,...&Xu, Xueqing.(2017).Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes.RSC ADVANCES,7(44),27464-27472.
MLA Li, Jingling,et al."Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes".RSC ADVANCES 7.44(2017):27464-27472.
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