Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
| High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing | |
Li, Jingling1,2; Jin, Hu1,2; Wang, Kelai1,3; Xie, Dehui1,3,4; Xu, Dehua1,2,4; Xu, Xueqing1,2 ; Xu, Gang1,2
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| 2016 | |
| Source Publication | RSC ADVANCES
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| Volume | 6Issue:76Pages:72462-72470 |
| Abstract | In this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (QLEDs), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of CuInS2/ZnS (ZCIS) QDs, and electron transport layer of ZnO nanoparticles, are fabricated. To improve the carrier-balance in QLEDs, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of CuInS2/ZnS quantum dots with 2-ethylhexanethiol. After this processing, improvement of current efficiency and external quantum efficiency of QLEDs is achieved. The optimized diodes exhibit a maximum luminance of 2354 cd m(-2) and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 V to 2.7 V) using these ligand-exchanged QDs as emitting materials. Furthermore, CuInS2-based QLEDs in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application. |
| Subtype | Article |
| WOS Headings | Science & Technology ; Physical Sciences |
| DOI | 10.1039/c6ra14241a |
| WOS Subject Extended | Chemistry |
| WOS Keyword | ONE-POT SYNTHESIS ; ELECTRON INJECTION ; ZNO NANOPARTICLES ; AQUEOUS-SOLUTION ; S NANOCRYSTALS ; EFFICIENT ; ELECTROLUMINESCENCE ; PHOTOLUMINESCENCE ; TERNARY ; BRIGHT |
| Indexed By | SCI |
| Language | 英语 |
| Funding Organization | National Natural Science Foundation of China(21073193 ; Project on the Integration of Industry, Education and Research of Guangdong Province(2012B091100476) ; Science and Technology Research Project of Guangzhou City(2014J4100218) ; Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion(MTEC-2015M01) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; 21273241) |
| WOS Subject | Chemistry, Multidisciplinary |
| WOS ID | WOS:000381513300078 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.giec.ac.cn/handle/344007/11846 |
| Collection | 中国科学院广州能源研究所 |
| Affiliation | 1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangzhou 510640, Guangdong, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China 4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China |
| First Author Affilication | GuangZhou Institute of Energy Conversion,Chinese Academy of Sciences |
| Recommended Citation GB/T 7714 | Li, Jingling,Jin, Hu,Wang, Kelai,et al. High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing[J]. RSC ADVANCES,2016,6(76):72462-72470. |
| APA | Li, Jingling.,Jin, Hu.,Wang, Kelai.,Xie, Dehui.,Xu, Dehua.,...&Xu, Gang.(2016).High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing.RSC ADVANCES,6(76),72462-72470. |
| MLA | Li, Jingling,et al."High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing".RSC ADVANCES 6.76(2016):72462-72470. |
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