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High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing
Li, Jingling1,2; Jin, Hu1,2; Wang, Kelai1,3; Xie, Dehui1,3,4; Xu, Dehua1,2,4; Xu, Xueqing1,2; Xu, Gang1,2
2016
Source PublicationRSC ADVANCES
Volume6Issue:76Pages:72462-72470
AbstractIn this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (QLEDs), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of CuInS2/ZnS (ZCIS) QDs, and electron transport layer of ZnO nanoparticles, are fabricated. To improve the carrier-balance in QLEDs, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of CuInS2/ZnS quantum dots with 2-ethylhexanethiol. After this processing, improvement of current efficiency and external quantum efficiency of QLEDs is achieved. The optimized diodes exhibit a maximum luminance of 2354 cd m(-2) and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 V to 2.7 V) using these ligand-exchanged QDs as emitting materials. Furthermore, CuInS2-based QLEDs in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application.
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1039/c6ra14241a
WOS Subject ExtendedChemistry
WOS KeywordONE-POT SYNTHESIS ; ELECTRON INJECTION ; ZNO NANOPARTICLES ; AQUEOUS-SOLUTION ; S NANOCRYSTALS ; EFFICIENT ; ELECTROLUMINESCENCE ; PHOTOLUMINESCENCE ; TERNARY ; BRIGHT
Indexed BySCI
Language英语
Funding OrganizationNational Natural Science Foundation of China(21073193 ; Project on the Integration of Industry, Education and Research of Guangdong Province(2012B091100476) ; Science and Technology Research Project of Guangzhou City(2014J4100218) ; Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion(MTEC-2015M01) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; 21273241)
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000381513300078
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/11846
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangzhou 510640, Guangdong, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
First Author AffilicationGuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Li, Jingling,Jin, Hu,Wang, Kelai,et al. High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing[J]. RSC ADVANCES,2016,6(76):72462-72470.
APA Li, Jingling.,Jin, Hu.,Wang, Kelai.,Xie, Dehui.,Xu, Dehua.,...&Xu, Gang.(2016).High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing.RSC ADVANCES,6(76),72462-72470.
MLA Li, Jingling,et al."High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing".RSC ADVANCES 6.76(2016):72462-72470.
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