High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

doi:10.1039/c6ra14241a

GIEC OpenIR > 中国科学院广州能源研究所

	High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing
	Li, Jingling 1,2; Jin, Hu 1,2; Wang, Kelai 1,3; Xie, Dehui 1,3,4; Xu, Dehua 1,2,4; Xu, Xueqing1,2 ; Xu, Gang1,2
	2016
发表期刊	RSC ADVANCES
卷号	6 期号:76 页码:72462-72470
摘要	In this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (QLEDs), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of CuInS2/ZnS (ZCIS) QDs, and electron transport layer of ZnO nanoparticles, are fabricated. To improve the carrier-balance in QLEDs, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of CuInS2/ZnS quantum dots with 2-ethylhexanethiol. After this processing, improvement of current efficiency and external quantum efficiency of QLEDs is achieved. The optimized diodes exhibit a maximum luminance of 2354 cd m(-2) and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 V to 2.7 V) using these ligand-exchanged QDs as emitting materials. Furthermore, CuInS2-based QLEDs in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1039/c6ra14241a
研究领域[WOS]	Chemistry
关键词[WOS]	ONE-POT SYNTHESIS ; ELECTRON INJECTION ; ZNO NANOPARTICLES ; AQUEOUS-SOLUTION ; S NANOCRYSTALS ; EFFICIENT ; ELECTROLUMINESCENCE ; PHOTOLUMINESCENCE ; TERNARY ; BRIGHT
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(21073193 ; Project on the Integration of Industry, Education and Research of Guangdong Province(2012B091100476) ; Science and Technology Research Project of Guangzhou City(2014J4100218) ; Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion(MTEC-2015M01) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; 21273241)
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000381513300078
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/11846
专题	中国科学院广州能源研究所
作者单位	1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangzhou 510640, Guangdong, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China 4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
第一作者单位	中国科学院广州能源研究所
推荐引用方式 GB/T 7714	Li, Jingling,Jin, Hu,Wang, Kelai,et al. High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing[J]. RSC ADVANCES,2016,6(76):72462-72470.
APA	Li, Jingling.,Jin, Hu.,Wang, Kelai.,Xie, Dehui.,Xu, Dehua.,...&Xu, Gang.(2016).High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing.RSC ADVANCES,6(76),72462-72470.
MLA	Li, Jingling,et al."High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing".RSC ADVANCES 6.76(2016):72462-72470.