Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method | |
Miao, Lei1; Xiao, Xiudi1; Ran, Fanyong2; Tanemura, Sakae3; Xu, Gang1 | |
2011-06-01 | |
发表期刊 | JAPANESE JOURNAL OF APPLIED PHYSICS |
卷号 | 50期号:6 |
摘要 | We have investigated the effects of Er concentration, post-annealing time and temperature through a sol-gel preparation method on the structure and 1.54-mu m-related photoluminescence (PL) of ZnO:Er thin films. The results illustrated that the 1.54 mu m emission was greatly influenced by the local structure of Er-O complex and ZnO host. The active oxygen movement during annealing process resulted in the formation of optical active center of Er ions, which probably attributed to the formation of a similar pseudo-octahedron with C-4v structure around Er. The preferential orientation of ZnO host had more effect on the 1.54 mu m PL intensity than the crystallinity of ZnO host. Therefore, the optimum annealing condition was about 800 degrees C/2 h and the appropriate concentration was about 0.05 at % Er. A low-cost and fast formation of highly efficient Er centers in ZnO host for strong luminescence at near-infared region should be benefit for both fundamental research and also applications of light-emitting devices. (C) 2011 The Japan Society of Applied Physics |
文章类型 | Article |
WOS标题词 | Science & Technology ; Physical Sciences |
DOI | 10.1143/JJAP.50.061101 |
研究领域[WOS] | Physics |
关键词[WOS] | OPTICALLY-ACTIVE CENTER ; VAPOR-PHASE EPITAXY ; M EMISSION DYNAMICS ; ACTIVATION PROCESS ; LOCAL-STRUCTURE ; LASER-ABLATION ; LUMINESCENCE ; SEMICONDUCTORS ; TEMPERATURE ; AMPLIFIERS |
收录类别 | SCI |
语种 | 英语 |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:000291741800013 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.giec.ac.cn/handle/344007/10347 |
专题 | 中国科学院广州能源研究所 |
作者单位 | 1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrates, Guangzhou 510640, Peoples R China 2.Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan 3.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan |
推荐引用方式 GB/T 7714 | Miao, Lei,Xiao, Xiudi,Ran, Fanyong,et al. Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50(6). |
APA | Miao, Lei,Xiao, Xiudi,Ran, Fanyong,Tanemura, Sakae,&Xu, Gang.(2011).Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method.JAPANESE JOURNAL OF APPLIED PHYSICS,50(6). |
MLA | Miao, Lei,et al."Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method".JAPANESE JOURNAL OF APPLIED PHYSICS 50.6(2011). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论