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Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method
Miao, Lei1; Xiao, Xiudi1; Ran, Fanyong2; Tanemura, Sakae3; Xu, Gang1
2011-06-01
发表期刊JAPANESE JOURNAL OF APPLIED PHYSICS
卷号50期号:6
摘要We have investigated the effects of Er concentration, post-annealing time and temperature through a sol-gel preparation method on the structure and 1.54-mu m-related photoluminescence (PL) of ZnO:Er thin films. The results illustrated that the 1.54 mu m emission was greatly influenced by the local structure of Er-O complex and ZnO host. The active oxygen movement during annealing process resulted in the formation of optical active center of Er ions, which probably attributed to the formation of a similar pseudo-octahedron with C-4v structure around Er. The preferential orientation of ZnO host had more effect on the 1.54 mu m PL intensity than the crystallinity of ZnO host. Therefore, the optimum annealing condition was about 800 degrees C/2 h and the appropriate concentration was about 0.05 at % Er. A low-cost and fast formation of highly efficient Er centers in ZnO host for strong luminescence at near-infared region should be benefit for both fundamental research and also applications of light-emitting devices. (C) 2011 The Japan Society of Applied Physics
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
DOI10.1143/JJAP.50.061101
研究领域[WOS]Physics
关键词[WOS]OPTICALLY-ACTIVE CENTER ; VAPOR-PHASE EPITAXY ; M EMISSION DYNAMICS ; ACTIVATION PROCESS ; LOCAL-STRUCTURE ; LASER-ABLATION ; LUMINESCENCE ; SEMICONDUCTORS ; TEMPERATURE ; AMPLIFIERS
收录类别SCI
语种英语
WOS类目Physics, Applied
WOS记录号WOS:000291741800013
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文献类型期刊论文
条目标识符http://ir.giec.ac.cn/handle/344007/10347
专题中国科学院广州能源研究所
作者单位1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrates, Guangzhou 510640, Peoples R China
2.Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
3.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
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Miao, Lei,Xiao, Xiudi,Ran, Fanyong,et al. Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50(6).
APA Miao, Lei,Xiao, Xiudi,Ran, Fanyong,Tanemura, Sakae,&Xu, Gang.(2011).Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method.JAPANESE JOURNAL OF APPLIED PHYSICS,50(6).
MLA Miao, Lei,et al."Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method".JAPANESE JOURNAL OF APPLIED PHYSICS 50.6(2011).
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