Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method

doi:10.1143/JJAP.50.061101

GIEC OpenIR > 中国科学院广州能源研究所

	Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method
	Miao, Lei 1; Xiao, Xiudi 1; Ran, Fanyong 2; Tanemura, Sakae 3; Xu, Gang 1
	2011-06-01
发表期刊	JAPANESE JOURNAL OF APPLIED PHYSICS
卷号	50 期号:6
摘要	We have investigated the effects of Er concentration, post-annealing time and temperature through a sol-gel preparation method on the structure and 1.54-mu m-related photoluminescence (PL) of ZnO:Er thin films. The results illustrated that the 1.54 mu m emission was greatly influenced by the local structure of Er-O complex and ZnO host. The active oxygen movement during annealing process resulted in the formation of optical active center of Er ions, which probably attributed to the formation of a similar pseudo-octahedron with C-4v structure around Er. The preferential orientation of ZnO host had more effect on the 1.54 mu m PL intensity than the crystallinity of ZnO host. Therefore, the optimum annealing condition was about 800 degrees C/2 h and the appropriate concentration was about 0.05 at % Er. A low-cost and fast formation of highly efficient Er centers in ZnO host for strong luminescence at near-infared region should be benefit for both fundamental research and also applications of light-emitting devices. (C) 2011 The Japan Society of Applied Physics
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1143/JJAP.50.061101
研究领域[WOS]	Physics
关键词[WOS]	OPTICALLY-ACTIVE CENTER ; VAPOR-PHASE EPITAXY ; M EMISSION DYNAMICS ; ACTIVATION PROCESS ; LOCAL-STRUCTURE ; LASER-ABLATION ; LUMINESCENCE ; SEMICONDUCTORS ; TEMPERATURE ; AMPLIFIERS
收录类别	SCI
语种	英语
WOS类目	Physics, Applied
WOS记录号	WOS:000291741800013
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/10347
专题	中国科学院广州能源研究所
作者单位	1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrates, Guangzhou 510640, Peoples R China 2.Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan 3.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
推荐引用方式 GB/T 7714	Miao, Lei,Xiao, Xiudi,Ran, Fanyong,et al. Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50(6).
APA	Miao, Lei,Xiao, Xiudi,Ran, Fanyong,Tanemura, Sakae,&Xu, Gang.(2011).Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method.JAPANESE JOURNAL OF APPLIED PHYSICS,50(6).
MLA	Miao, Lei,et al."Influence of Annealing on the Structure and 1.54 mu m Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol-Gel Method".JAPANESE JOURNAL OF APPLIED PHYSICS 50.6(2011).