Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

doi:10.1016/j.tsf.2005.10.069

GIEC OpenIR > 中国科学院广州能源研究所

	Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
	Ai, B ; Shen, H ; Liang, ZC ; Chen, Z ; Kong, GL ; Liao, XB
	2006-02-21
发表期刊	THIN SOLID FILMS
卷号	497 期号:1-2 页码:157-162
摘要	In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.
文章类型	Article
关键词	Chemical Vapour Deposition Electrical Properties And Measurements Scanning Electron Microscopy Polycrystalline Silicon
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1016/j.tsf.2005.10.069
研究领域[WOS]	Materials Science ; Physics
关键词[WOS]	GRAIN-BOUNDARIES ; STATES
收录类别	SCI
语种	英语
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000234957300025
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/10259
专题	中国科学院广州能源研究所
作者单位	1.Sun Yat Sen Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Solar Energy Lab, Guangzhou 510640, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ai, B,Shen, H,Liang, ZC,et al. Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[J]. THIN SOLID FILMS,2006,497(1-2):157-162.
APA	Ai, B,Shen, H,Liang, ZC,Chen, Z,Kong, GL,&Liao, XB.(2006).Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition.THIN SOLID FILMS,497(1-2),157-162.
MLA	Ai, B,et al."Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition".THIN SOLID FILMS 497.1-2(2006):157-162.