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Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates
Ai, B; Shen, H; Ban, Q; Liang, ZC; Li, XD; Xu, Y; Liao, XB
2005-03-15
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume276Issue:1-2Pages:83-91
AbstractHeavily B-doped silicon ribbons were prepared by modified silicon sheets from powder (SSP) technique using 9 N purity electronic-grade silicon powder. Utilizing the SSP ribbons as substrates, crystalline silicon thin film (CSiTF) solar cells have been fabricated by direct epitaxy method. As-prepared CSiTF solar cells were characterized by illuminated and dark I-V characteristic measurement, Suns-V-oc measurement, quantum efficiency (QE) and reflectance measurement. The results show that the CSiTF solar cells have poor performance with typical efficiency eta only about 4.25%, and nearly all the characteristic parameters are far away from the ideal values. By detailed analysis and discussion on the measured results, it was found that grain boundary (GB) recombination in the active layers and electrical leakage at the edge of the PN junctions play a major role in deteriorating the performance of the CSiTF solar cells, which lead to higher dark saturation current Is and lower parallel resistance R-sh, respectively. By improving the preparation process, such as optimization of the epitaxy process, use of remote plasma hydrogen passivation (RPHP), optimization of the metallization and use of double layer anti-reflection (DLAR) coatings, etc., all the characteristic parameters of the CSiTF solar cells have been greatly improved, and the best efficiency value increased to 8.02%. (c) 2004 Elsevier B.V. All rights reserved.
SubtypeArticle
KeywordSubstrates Vapor-phase Epitaxy Semiconducting Silicon Solar Cells
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1016/j.jcrysgro.2004.11.384
WOS Subject ExtendedCrystallography ; Materials Science ; Physics
WOS KeywordCRYSTALLINE SILICON ; SSP
Indexed BySCI
Language英语
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000228218300013
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/10238
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Solar Energy Lab, Guangzhou 510640, Peoples R China
2.Sun Yat Sen Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China
3.Beijing Solar Energy Res Inst, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Ai, B,Shen, H,Ban, Q,et al. Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates[J]. JOURNAL OF CRYSTAL GROWTH,2005,276(1-2):83-91.
APA Ai, B.,Shen, H.,Ban, Q.,Liang, ZC.,Li, XD.,...&Liao, XB.(2005).Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates.JOURNAL OF CRYSTAL GROWTH,276(1-2),83-91.
MLA Ai, B,et al."Study on epitaxial silicon thin film solar cells on low cost silicon ribbon substrates".JOURNAL OF CRYSTAL GROWTH 276.1-2(2005):83-91.
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