Preparation and characterization of Si sheets by renewed SSP technique

doi:10.1016/j.jcrysgro.2004.04.127

GIEC OpenIR > 中国科学院广州能源研究所

	Preparation and characterization of Si sheets by renewed SSP technique
	Ai, B ; Shen, H ; Ban, Q ; Wang, XJ ; Liang, ZC ; Liao, XB
	2004-10-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
卷号	270 期号:3-4 页码:446-454
摘要	Silicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (C) 2004 Elsevier B.V. All rights reserved.
文章类型	Article
关键词	Crystal Structure Recrystallization Substrates Growth From Melt Semiconducting Silicon
WOS标题词	Science & Technology ; Physical Sciences ; Technology
DOI	10.1016/j.jcrysgro.2004.04.127
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	FILM CRYSTALLINE SILICON ; SOLAR-CELL APPLICATIONS
收录类别	SCI
语种	英语
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000224290100024
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/10205
专题	中国科学院广州能源研究所
作者单位	1.Chinese Acad Sci, Solar Energy Lab, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ai, B,Shen, H,Ban, Q,et al. Preparation and characterization of Si sheets by renewed SSP technique[J]. JOURNAL OF CRYSTAL GROWTH,2004,270(3-4):446-454.
APA	Ai, B,Shen, H,Ban, Q,Wang, XJ,Liang, ZC,&Liao, XB.(2004).Preparation and characterization of Si sheets by renewed SSP technique.JOURNAL OF CRYSTAL GROWTH,270(3-4),446-454.
MLA	Ai, B,et al."Preparation and characterization of Si sheets by renewed SSP technique".JOURNAL OF CRYSTAL GROWTH 270.3-4(2004):446-454.