Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
| Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering | |
| Wang, Xing1,2; He, Hongcai1,2; Wang, Ning1,2; Miao, Lei3 | |
| 2013-07-01 | |
| Source Publication | APPLIED SURFACE SCIENCE
 |
| Volume | 276Pages:539-542 |
| Abstract | N-type thermoelectric bismuth telluride (Bi2Te3) films were grown on SiO2/Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 degrees C) on surface morphology, crystal structure and thermoelectric properties of the Bi2Te3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 mu V/K and 21 mu W/K(2)cm, respectively, obtained at the annealing temperature of 300 degrees C. (C) 2013 Elsevier B.V. All rights reserved. |
| Subtype | Article |
| Keyword | Bismuth Telluride Thermoelectric Thin Film Annealing Temperature Co-sputtering |
| WOS Headings | Science & Technology ; Physical Sciences ; Technology |
| DOI | 10.1016/j.apsusc.2013.03.130 |
| WOS Subject Extended | Chemistry ; Materials Science ; Physics |
| WOS Keyword | TELLURIDE THIN-FILMS ; DEPOSITION ; GROWTH |
| Indexed By | SCI |
| Language | 英语 |
| WOS Subject | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000318979800077 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.giec.ac.cn/handle/344007/10128 |
| Collection | 中国科学院广州能源研究所 |
| Affiliation | 1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China 2.Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China 3.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrate, Guangzhou 510640, Guangdong, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Xing,He, Hongcai,Wang, Ning,et al. Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering[J]. APPLIED SURFACE SCIENCE,2013,276:539-542. |
| APA | Wang, Xing,He, Hongcai,Wang, Ning,&Miao, Lei.(2013).Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering.APPLIED SURFACE SCIENCE,276,539-542. |
| MLA | Wang, Xing,et al."Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering".APPLIED SURFACE SCIENCE 276(2013):539-542. |
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