Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering

doi:10.1016/j.apsusc.2013.03.130

GIEC OpenIR > 中国科学院广州能源研究所

	Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering
	Wang, Xing 1,2; He, Hongcai 1,2; Wang, Ning 1,2; Miao, Lei 3
	2013-07-01
发表期刊	APPLIED SURFACE SCIENCE
卷号	276 页码:539-542
摘要	N-type thermoelectric bismuth telluride (Bi2Te3) films were grown on SiO2/Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 degrees C) on surface morphology, crystal structure and thermoelectric properties of the Bi2Te3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 mu V/K and 21 mu W/K(2)cm, respectively, obtained at the annealing temperature of 300 degrees C. (C) 2013 Elsevier B.V. All rights reserved.
文章类型	Article
关键词	Bismuth Telluride Thermoelectric Thin Film Annealing Temperature Co-sputtering
WOS标题词	Science & Technology ; Physical Sciences ; Technology
DOI	10.1016/j.apsusc.2013.03.130
研究领域[WOS]	Chemistry ; Materials Science ; Physics
关键词[WOS]	TELLURIDE THIN-FILMS ; DEPOSITION ; GROWTH
收录类别	SCI
语种	英语
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000318979800077
引用统计	被引频次：57[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/10128
专题	中国科学院广州能源研究所
作者单位	1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China 2.Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China 3.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrate, Guangzhou 510640, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Wang, Xing,He, Hongcai,Wang, Ning,et al. Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering[J]. APPLIED SURFACE SCIENCE,2013,276:539-542.
APA	Wang, Xing,He, Hongcai,Wang, Ning,&Miao, Lei.(2013).Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering.APPLIED SURFACE SCIENCE,276,539-542.
MLA	Wang, Xing,et al."Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering".APPLIED SURFACE SCIENCE 276(2013):539-542.