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Electron injection assisted phase transition in a nano-Au-VO2 junction
Xu, Gang1; Huang, C. -M.1; Tazawa, Masato2; Jin, Ping2; Chen, D. -M.1; Miao, L.1
2008-08-11
Source PublicationAPPLIED PHYSICS LETTERS
Volume93Issue:6Pages:-
Corresponding Authorxugang@ms.giec.ac.cn ; tazawa.m@aist.go.jp
AbstractThe semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2. (C) 2008 American Institute of Physics.
SubtypeArticle
Other AbstractThe semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.
KeywordMetal-insulator-transition Surface-plasmon Resonance Vanadium Dioxide Films Vo2
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1063/1.2972106
WOS Subject ExtendedPhysics
WOS KeywordMETAL-INSULATOR-TRANSITION ; SURFACE-PLASMON RESONANCE ; VANADIUM DIOXIDE ; FILMS ; VO2
Indexed BySCI
Language英语
Funding OrganizationNational High Technology Research and Development Program of China [2007AA03Z326]; Department of Science and Technology of Guangdong Province [200649851105]; Bureau of Science and Technology of Guangzhou Municipality [2007Z2-D2051]
WOS SubjectPhysics, Applied
WOS IDWOS:000258491000027
Citation statistics
Cited Times:57[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/3386
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrate, Guangzhou 510640, Peoples R China
2.Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan
Recommended Citation
GB/T 7714
Xu, Gang,Huang, C. -M.,Tazawa, Masato,et al. Electron injection assisted phase transition in a nano-Au-VO2 junction[J]. APPLIED PHYSICS LETTERS,2008,93(6):-.
APA Xu, Gang,Huang, C. -M.,Tazawa, Masato,Jin, Ping,Chen, D. -M.,&Miao, L..(2008).Electron injection assisted phase transition in a nano-Au-VO2 junction.APPLIED PHYSICS LETTERS,93(6),-.
MLA Xu, Gang,et al."Electron injection assisted phase transition in a nano-Au-VO2 junction".APPLIED PHYSICS LETTERS 93.6(2008):-.
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