Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

doi:10.1039/c7ra04021k

GIEC OpenIR > 中国科学院广州能源研究所

	Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes
	Li, Jingling 1,2,3; Guo, Qiling 1,2,4; Jin, Hu 1,2,3; Wang, Kelai 1,2,5; Xu, Dehua 1,2,3; Xu, Gang1,2,3 ; Xu, Xueqing1,2,3
	2017
发表期刊	RSC ADVANCES
卷号	7 期号:44 页码:27464-27472
摘要	In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated. As a result of the excellent wettability of the MoOx precursor, a smooth sMoO(x) HIL film with a roughness of less than 1 nm was obtained. In comparison with a device based on PEDOT:PSS, the best sMoO(x)-based QD-LED displayed comparable device performance in terms of a maximum luminance of 10 225 cd m(-2), a peak current efficiency of 4.04 cd A(-1), a maximum external quantum efficiency of 1.61% and, more importantly, an approximately threefold increase in operational lifetime. Furthermore, we investigated the relationship between the thermal treatment of the sMoO(x) film and the device performance. UPS measurements revealed that the work function of the sMoOx film underwent an upshift from 5.51 to 4.90 eV when the annealing temperature was increased from 50 to 250 C-circle, which indicated that low-temperature treatment of the sMoO(x) HIL is beneficial for hole injection and EL performance. This demonstration of a bright, efficient and stable sMoO(x)-based QD-LED provides another feasible application of solution-processable transition metal oxide materials as the HIL within QD-LEDs and promotes the development of low-cost, all-solution-processed optoelectronic devices.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1039/c7ra04021k
研究领域[WOS]	Chemistry
关键词[WOS]	CHARGE-TRANSPORT LAYERS ; ORGANIC ELECTRONICS ; HIGHLY EFFICIENT ; DEVICES ; PERFORMANCE ; MULTILAYER ; BRIGHT
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(21273241) ; Natural Science Foundation of Guangdong Province(2015A030310501) ; Project on the Collaborative Innovation and Environmental Construction Platform of Guangdong Province(2014A050503051) ; Key Project on Synergy Collaborative Innovation of Guangzhou City(201704030069)
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000402166600034
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/14141
专题	中国科学院广州能源研究所
作者单位	1.Chinese Acad Sci, CAS Key Lab Renewable Energy, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China 2.Guangdong Prov Key Lab New & Renewable Energy Res, Guangzhou 510640, Guangdong, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China 5.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Li, Jingling,Guo, Qiling,Jin, Hu,et al. Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes[J]. RSC ADVANCES,2017,7(44):27464-27472.
APA	Li, Jingling.,Guo, Qiling.,Jin, Hu.,Wang, Kelai.,Xu, Dehua.,...&Xu, Xueqing.(2017).Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes.RSC ADVANCES,7(44),27464-27472.
MLA	Li, Jingling,et al."Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes".RSC ADVANCES 7.44(2017):27464-27472.