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Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance
Wu, L. P.1; Zhang, Y. L.1; Long, L. Z.1; Cen, C. P.2; Li, X. J.1
2014
发表期刊RSC ADVANCES
卷号4期号:40页码:20716-20721
摘要ZnO/CdS/ZnS and ZnO/ZnS/CdS nanorod array photoelectrodes were constructed and fabricated by an alternative chemical bath deposition of CdS and ZnS layers onto the surface of the ZnO nanorod array. The photoelectrochemical performances of composite photoelectrodes were investigated, and the action mechanism of ZnS buffer layers was also considered. The results show that the ZnO/ZnS/CdS nanorod array photoelectrode possesses enhanced hydrogen production efficiency. The enhancement may be attributed to the ZnS buffer layers, which are advantageous in the separation and transportation of photogenerated electron-hole pairs in ZnO/ZnS/CdS nanorod array photoelectrodes.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
DOI10.1039/c4ra00005f
研究领域[WOS]Chemistry
关键词[WOS]SOLAR-CELLS ; THIN-FILM ; PHOTOCATALYTIC ACTIVITY
收录类别SCI
语种英语
WOS类目Chemistry, Multidisciplinary
WOS记录号WOS:000336833400017
引用统计
被引频次:14[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.giec.ac.cn/handle/344007/10773
专题中国科学院广州能源研究所
作者单位1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China
2.South China Inst Environm Sci, Key Lab Water & Air Pollut Control Guangdong Prov, Minist Environm Protect, Guangzhou 510640, Guangdong, Peoples R China
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Wu, L. P.,Zhang, Y. L.,Long, L. Z.,et al. Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance[J]. RSC ADVANCES,2014,4(40):20716-20721.
APA Wu, L. P.,Zhang, Y. L.,Long, L. Z.,Cen, C. P.,&Li, X. J..(2014).Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance.RSC ADVANCES,4(40),20716-20721.
MLA Wu, L. P.,et al."Effect of ZnS buffer layers in ZnO/ZnS/CdS nanorod array photoelectrode on the photoelectrochemical performance".RSC ADVANCES 4.40(2014):20716-20721.
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