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Microstructure and optical properties of silicon nitride thin films as radiative cooling materials
Liang, ZC; Shen, H; Li, JH; Xu, NS
2002
发表期刊SOLAR ENERGY
卷号72期号:6页码:505-510
摘要SiNx thin films were prepared by the RF plasma-enhanced chemical vapor deposition method. Composition, structure, surface morphology and optical properties of the thin films were analyzed by X-ray fluorescence, IR transmittance, IR reflectance and SEM. The results show that the composition of the films is SiN0.35. Nitrogen atoms take part in the reaction with silicon atoms and Si-N bonds are formed. There are also some Si-H and N-H bonds in the films. The films have very low hemispherical IR reflectance across the full 8-13 mum band and high hemispherical reflectance elsewhere, which indicates that silicon nitride films can be used as good radiative cooling materials. The surface morphology and growth mechanisms of the films were also explained. (C) 2002 Elsevier Science Ltd. All rights reserved.
文章类型Article
WOS标题词Science & Technology ; Technology
研究领域[WOS]Energy & Fuels
关键词[WOS]PLASMA
收录类别SCI
语种英语
WOS类目Energy & Fuels
WOS记录号WOS:000177851400004
引用统计
被引频次:18[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.giec.ac.cn/handle/344007/10451
专题中国科学院广州能源研究所
作者单位1.CAS, Guangzhou Inst Energy Convers, Guangzhou 510070, Peoples R China
2.Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China
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Liang, ZC,Shen, H,Li, JH,et al. Microstructure and optical properties of silicon nitride thin films as radiative cooling materials[J]. SOLAR ENERGY,2002,72(6):505-510.
APA Liang, ZC,Shen, H,Li, JH,&Xu, NS.(2002).Microstructure and optical properties of silicon nitride thin films as radiative cooling materials.SOLAR ENERGY,72(6),505-510.
MLA Liang, ZC,et al."Microstructure and optical properties of silicon nitride thin films as radiative cooling materials".SOLAR ENERGY 72.6(2002):505-510.
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