QE and Suns-V-oc study on the epitaxial CSiTF solar cells

doi:10.1360/04ye0201

GIEC OpenIR > 中国科学院广州能源研究所

	QE and Suns-V-oc study on the epitaxial CSiTF solar cells
	Bin, A ; Shen, H ; Ban, Q ; Liang, ZC ; Chen, RL ; Shi, ZR ; Liao, XB
	2005-02-01
发表期刊	SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
卷号	48 期号:1 页码:41-52
摘要	In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.
文章类型	Article
关键词	Ssp Ribbon Crystalline Silicon Thin Film Solar Cells Quantum Efficiency Dark Characteristics
WOS标题词	Science & Technology ; Technology
DOI	10.1360/04ye0201
研究领域[WOS]	Engineering ; Materials Science
关键词[WOS]	POLYCRYSTALLINE SILICON FILMS ; CRYSTALLINE SILICON ; SSP
收录类别	SCI
语种	英语
WOS类目	Engineering, Multidisciplinary ; Materials Science, Multidisciplinary
WOS记录号	WOS:000228223500004
引用统计
文献类型	期刊论文
条目标识符	http://ir.giec.ac.cn/handle/344007/10212
专题	中国科学院广州能源研究所
作者单位	1.SUN YAT SEN Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China 3.Suntech Power Co Ltd, Wuxi 214028, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Bin, A,Shen, H,Ban, Q,et al. QE and Suns-V-oc study on the epitaxial CSiTF solar cells[J]. SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,2005,48(1):41-52.
APA	Bin, A.,Shen, H.,Ban, Q.,Liang, ZC.,Chen, RL.,...&Liao, XB.(2005).QE and Suns-V-oc study on the epitaxial CSiTF solar cells.SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,48(1),41-52.
MLA	Bin, A,et al."QE and Suns-V-oc study on the epitaxial CSiTF solar cells".SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE 48.1(2005):41-52.