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Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination
Xu, Xueqing1,2; Wan, Qingcui1,2; Luan, Chunyan3,4; Mei, Fengjiao1; Zhao, Qian1,2; An, Ping1,2; Liang, Zhurong1,2; Xu, Gang1,2; Zapien, Juan Antonio3,4
2013-11-13
发表期刊ACS APPLIED MATERIALS & INTERFACES
卷号5期号:21页码:10605-10613
摘要Tetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of beta-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of similar to 0.92% (V-oc, = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below E-F0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.
文章类型Article
关键词Cuins2 Sensitized Solar Cells Fabrication Successive Ionic Layer Absorption And Reaction (Silar) Electron Recombination
WOS标题词Science & Technology ; Technology
DOI10.1021/am402502a
研究领域[WOS]Science & Technology - Other Topics ; Materials Science
关键词[WOS]THIN-FILMS ; IMPEDANCE SPECTROSCOPY ; OPTICAL-PROPERTIES ; CHARGE-TRANSFER ; QUANTUM DOTS ; CUINS2 ; SEMICONDUCTOR ; NANOCRYSTALS ; CDS
收录类别SCI
语种英语
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000327103500028
引用统计
被引频次:26[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.giec.ac.cn/handle/344007/10082
专题中国科学院广州能源研究所
作者单位1.Chinese Acad Sci, Guangzhou Inst Energy Convers, CAS Key Lab Renewable Energy, Guangzhou 510640, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, New Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, Ctr Funct Photon, New Kowloon, Hong Kong, Peoples R China
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Xu, Xueqing,Wan, Qingcui,Luan, Chunyan,et al. Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination[J]. ACS APPLIED MATERIALS & INTERFACES,2013,5(21):10605-10613.
APA Xu, Xueqing.,Wan, Qingcui.,Luan, Chunyan.,Mei, Fengjiao.,Zhao, Qian.,...&Zapien, Juan Antonio.(2013).Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination.ACS APPLIED MATERIALS & INTERFACES,5(21),10605-10613.
MLA Xu, Xueqing,et al."Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination".ACS APPLIED MATERIALS & INTERFACES 5.21(2013):10605-10613.
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