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Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination
Xu, Xueqing1,2; Wan, Qingcui1,2; Luan, Chunyan3,4; Mei, Fengjiao1; Zhao, Qian1,2; An, Ping1,2; Liang, Zhurong1,2; Xu, Gang1,2; Zapien, Juan Antonio3,4
2013-11-13
Source PublicationACS APPLIED MATERIALS & INTERFACES
Volume5Issue:21Pages:10605-10613
AbstractTetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of beta-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of similar to 0.92% (V-oc, = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below E-F0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.
SubtypeArticle
KeywordCuins2 Sensitized Solar Cells Fabrication Successive Ionic Layer Absorption And Reaction (Silar) Electron Recombination
WOS HeadingsScience & Technology ; Technology
DOI10.1021/am402502a
WOS Subject ExtendedScience & Technology - Other Topics ; Materials Science
WOS KeywordTHIN-FILMS ; IMPEDANCE SPECTROSCOPY ; OPTICAL-PROPERTIES ; CHARGE-TRANSFER ; QUANTUM DOTS ; CUINS2 ; SEMICONDUCTOR ; NANOCRYSTALS ; CDS
Indexed BySCI
Language英语
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000327103500028
Citation statistics
Cited Times:26[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/10082
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, Guangzhou Inst Energy Convers, CAS Key Lab Renewable Energy, Guangzhou 510640, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, New Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, Ctr Funct Photon, New Kowloon, Hong Kong, Peoples R China
First Author AffilicationGuangZhou Institute of Energy Conversion,Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Xu, Xueqing,Wan, Qingcui,Luan, Chunyan,et al. Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination[J]. ACS APPLIED MATERIALS & INTERFACES,2013,5(21):10605-10613.
APA Xu, Xueqing.,Wan, Qingcui.,Luan, Chunyan.,Mei, Fengjiao.,Zhao, Qian.,...&Zapien, Juan Antonio.(2013).Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination.ACS APPLIED MATERIALS & INTERFACES,5(21),10605-10613.
MLA Xu, Xueqing,et al."Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination".ACS APPLIED MATERIALS & INTERFACES 5.21(2013):10605-10613.
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